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| MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMDFS6N303/D Product Preview FETKYTM MMDFS6N303 N-Channel Power MOSFET with Schottky Rectifier 30 Volts RDS(on) = 35 mW VF = 0.42 Volts MOSFET and Schottky Rectifier The FETKYTM product family incorporates low RDS(on), true logic level MOSFETs packaged with industry leading, low forward drop, low leakage Schottky Barrier rectifiers to offer high efficiency components in a space saving configuration. Independent pinouts for TMOS and Schottky die allow the flexibility to use a single component for switching and rectification functions in a wide variety of applications such as Buck Converter, Buck-Boost, Synchronous Rectification, Low Voltage Motor Control, and Load Management in Battery Packs, Chargers, Cell Phones and other Portable Products. * * * * * * * HDTMOS Power MOSFET with Low VF Lower Component Placement and Inventory Costs along with Board Space Savings Logic Level Gate Drive -- Can be Driven by Logic ICs Mounting Information for SO-8 Package Provided Applications Information Provided R2 Suffix for Tape and Reel (2500 units/13 reel) Marking: 6N303 A 1 2 3 4 5 8 7 6 C C D D CASE 751-06, Style 18 (SO- 8) TM A S G TOP VIEW MOSFET MAXIMUM RATINGS (TJ = 25C unless otherwise noted) (1) Rating Drain-to-Source Voltage Drain-to-Gate Voltage (RGS = 1.0 MW) Gate-to-Source Voltage -- Continuous Drain Current (2) -- Continuous @ TA = 25C -- Single Pulse (tp 10 ms) Symbol VDSS VDGR VGS ID IDM PD EAS Value 30 Unit Vdc Vdc Vdc Adc Apk Watts mJ "20 6.0 30 2.0 325 30 v Total Power Dissipation @ TA = 25C (2) Single Pulse Drain-to-Source Avalanche Energy -- STARTING TJ = 25C VDD = 30 Vdc, VGS = 5.0 Vdc, VDS = 20 Vdc, IL = 9.0 Apk, L = 10 mH, RG = 25 W SCHOTTKY RECTIFIER MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Peak Repetitive Reverse Voltage DC Blocking Voltage Average Forward Current (2) (Rated VR) TA = 104C Peak Repetitive Forward Current (2) (Rated VR, Square Wave, 20 kHz) TA = 108C Non-Repetitive Peak Surge Current (Surge applied at rated load conditions, halfwave, single phase, 60 Hz) (1) Pulse Test: Pulse Width 250 s, Duty Cycle 2.0%. (2) Mounted on 2 square FR4 board (1 sq. 2 oz. Cu 0.06 thick single sided), 10 sec. max. This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice. VRRM VR IO 30 Volts Amps 2.0 Ifrm 4.0 Ifsm 30 Amps Amps HDTMOS and Designer's are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. FETKY is a trademark of International Rectifier. (c) Motorola TMOS Motorola, Inc. 1998 Product Preview Data 1 MMDFS6N303 THERMAL CHARACTERISTICS -- SCHOTTKY AND MOSFET Thermal Resistance -- Junction-to-Ambient (1) -- MOSFET Thermal Resistance -- Junction-to-Ambient (2) -- MOSFET Thermal Resistance -- Junction-to-Ambient (3) -- MOSFET Thermal Resistance -- Junction-to-Ambient (1) -- Schottky Thermal Resistance -- Junction-to-Ambient (2) -- Schottky Thermal Resistance -- Junction-to-Ambient (3) -- Schottky Operating and Storage Temperature Range RqJA RqJA RqJA RqJA RqJA RqJA Tj, Tstg 167 97 62.5 197 97 62.5 - 55 to 150 C/W (1) Mounted with minimum recommended pad size, PC Board FR4. (2) Mounted on 2 square FR4 board (1 sq. 2 oz. Cu 0.06 thick single sided), Steady State. (3) Mounted on 2 square FR4 board (1 sq. 2 oz. Cu 0.06 thick single sided), 10 sec. max. 2 Motorola TMOS Product Preview Data MMDFS6N303 MOSFET ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) (1) Characteristic OFF CHARACTERISTICS Drain-Source Voltage (VGS = 0 Vdc, ID = 0.25 mA) Temperature Coefficient (Positive) Zero Gate Drain Current (VDS = 24 Vdc, VGS = 0 Vdc) (VDS = 24 Vdc, VGS = 0 Vdc, TJ = 125C) Gate Body Leakage Current (VGS = 20 Vdc, VDS = 0) ON CHARACTERISTICS (1) Gate Threshold Voltage (VDS = VGS, ID = 0.25 mA) Temperature Coefficient (Negative) Static Drain-Source Resistance (VGS = 10 Vdc, ID = 5.0 Adc) (VGS = 4.5 Vdc, ID = 3.9 Adc) Forward Transconductance (VDS = 15 Vdc, ID = 5.0 Adc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS (2) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Gate Charge ( (VDS = 15 Vdc, ID = 5.0 Adc, Vd , 5 0 Ad , VGS = 10 Vdc) Vdc, 1.0 Adc, (VDD = 15 Vd ID = 1 0 Ad VGS = 10 Vdc Vdc, RG = 6.0 ) ) td(on) tr td(off) tf QT Q1 Q2 Q3 DRAIN SOURCE DIODE CHARACTERISTICS Forward On-Voltage (1) Reverse Recovery Time ( (VGS = 0 V, IS = 5 0 A, V, 5.0 A, dIS/dt = 100 A/s) Reverse Recovery Stored Charge -- -- -- -- -- -- -- -- 8.2 8.5 89.6 61.1 15.7 2.0 4.6 3.9 16.5 17 179 122 31.4 -- -- -- nC ns (VDS = 24 Vdc, VGS = 0 Vdc, Vdc Vdc f = 1.0 MHz) Ciss Coss Crss -- -- -- 430 217 67.5 600 300 135 pF VGS(th) 1.0 -- RDS(on) -- -- gFS -- 28 42 9.0 35 50 -- mhos -- -- -- -- mW Vdc V(BR)DSS 30 -- IDSS -- -- IGSS -- -- -- -- 1.0 20 100 nAdc -- -- -- -- Vdc mV/C Adc Symbol Min Typ Max Unit (IS = 1.7 Adc, VGS = 0 Vdc) VSD -- trr ta tb QRR -- -- -- -- 0.77 54.5 14.8 39.7 0.048 1.2 -- -- -- -- Vdc ns C SCHOTTKY RECTIFIER ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Maximum Instantaneous Forward Voltage (1) IF = 100 mAdc Ad IF = 3.0 Adc IF = 6.0 Adc Maximum Instantaneous Reverse Current (1) VR = 30 V IR VF TJ = 25C 0.28 0.42 0.50 TJ = 25C 250 -- Maximum Voltage Rate of Change VR = 30 V dV/dt 10,000 TJ = 125C 0.13 0.33 0.45 TJ = 125C -- 25 mA V/ms Volts mA (1) Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. (2) Switching characteristics are independent of operating junction temperature. Motorola TMOS Product Preview Data 3 MMDFS6N303 TYPICAL FET ELECTRICAL CHARACTERISTICS 12 10 V 10 ID, DRAIN CURRENT (AMPS) 8.0 6.0 4.0 2.0 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VGS = 2.9 V 3.5 V ID, DRAIN CURRENT (AMPS) 4.5 V 3.9 V TJ = 25C 10 8.0 6.0 4.0 2.0 0 1.5 2.5 3.5 4.5 5.5 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 25C 12 VDS 10 V 3.3 V 125C TJ = - 55C Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics R DS(on), DRAIN-TO-SOURCE RESISTANCE (OHMS) 0.3 TJ = 25C ID = 6.0 A 0.2 R DS(on), DRAIN-TO-SOURCE RESISTANCE (OHMS) 0.05 TJ = 25C VGS = 4.5 V 0.04 0.1 0.03 10 V 0 2.0 4.0 6.0 8.0 10 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 0.02 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 ID, DRAIN CURRENT (AMPS) Figure 3. On-Resistance versus Gate-To-Source Voltage R DS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) Figure 4. On-Resistance versus Drain Current and Gate Voltage 1.8 VGS = 10 V ID = 6.0 A 1000 VGS = 0 V IDSS , LEAKAGE (nA) 1.4 100 TJ = 125C 1.0 10 100C 0.6 0.2 -50 1.0 -25 0 25 50 75 100 125 150 0 5.0 10 15 20 25 30 TJ, JUNCTION TEMPERATURE (C) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 5. On-Resistance Variation with Temperature Figure 6. Drain-To-Source Leakage Current versus Voltage 4 Motorola TMOS Product Preview Data MMDFS6N303 TYPICAL FET ELECTRICAL CHARACTERISTICS VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) VDS = 0 Ciss 1000 C, CAPACITANCE (pF) 800 600 Ciss 400 Coss 200 0 -10 Crss - 5.0 VGS 0 VDS 5.0 10 15 20 25 30 Crss VGS = 0 TJ = 25C 12 QT 10 8.0 Q1 6.0 4.0 2.0 Q3 0 0 4.0 8.0 VDS 12 ID = 5.0 A TJ = 25C 0 16 10 Q2 VGS 20 30 1200 QG, TOTAL GATE CHARGE (nC) GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 8. Gate-To-Source and Drain-To-Source Voltage versus Total Charge Figure 7. Capacitance Variation 1000 5.0 VGS = 0 V TJ = 25C IS, SOURCE CURRENT (AMPS) 100 td(off) 100 t, TIME (ns) tf tr 10 td(on) 4.0 3.0 2.0 1.0 0 1.0 1.0 10 RG, GATE RESISTANCE (OHMS) 0.5 0.6 0.7 0.8 0.9 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) Figure 9. Resistive Switching Time Variation versus Gate Resistance Figure 10. Diode Forward Voltage versus Current 100 EAS , SINGLE PULSE DRAIN-TO-SOURCE AVALANCHE ENERGY (mJ) ID, DRAIN CURRENT (AMPS) Mounted on 2 sq. FR4 board (1 sq. 2 oz. Cu 0.06 thick single sided) with one die operating, 10 s max. 1.0 ms 10 ms VGS = 12 V SINGLE PULSE TC = 25C 350 300 250 200 150 100 50 0 ID = 6.0 A 10 1.0 dc 0.1 RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 0.1 1.0 10 100 0.01 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 25 50 75 100 125 150 TJ, STARTING JUNCTION TEMPERATURE (C) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Avalanche Energy versus Starting Junction Temperature Motorola TMOS Product Preview Data 5 MMDFS6N303 TYPICAL FET ELECTRICAL CHARACTERISTICS 1.0 D = 0.5 Rthja(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE 0.2 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE 0.001 0.00001 0.0001 0.001 0.01 0.1 t, TIME (s) 1.0 10 100 1000 CHIP JUNCTION 0.0106 W 0.0431 W 0.1643 W 0.3507 W 0.4302 W 0.0253 F 0.1406 F 0.5064 F 2.9468 F 177.14 F AMBIENT 0.1 Figure 13. FET Thermal Response di/dt IS trr ta tb TIME tp IS 0.25 IS Figure 14. Diode Reverse Recovery Waveform TYPICAL SCHOTTKY ELECTRICAL CHARACTERISTICS IF, INSTANTANEOUS FORWARD CURRENT (AMPS) IF, INSTANTANEOUS FORWARD CURRENT (AMPS) 10 85C 25C 10 85C TJ = 125C 1.0 - 40C TJ = 125C 1.0 25C 0.1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS) Figure 15. Typical Forward Voltage Figure 16. Maximum Forward Voltage 6 Motorola TMOS Product Preview Data MMDFS6N303 TYPICAL SCHOTTKY ELECTRICAL CHARACTERISTICS IR, MAXIMUM REVERSE CURRENT (AMPS) 0.1 IR, REVERSE CURRENT (AMPS) TJ = 125C 0.01 85C 0.001 0.1 TJ = 125C 0.01 0.001 0.0001 25C 0.0001 25C 0.00001 0.000001 0 5.0 10 15 20 25 30 VR, REVERSE VOLTAGE (VOLTS) 0.00001 0.000001 0 5.0 10 15 20 25 30 VR, REVERSE VOLTAGE (VOLTS) Figure 17. Typical Reverse Current Figure 18. Maximum Reverse Current IO , AVERAGE FORWARD CURRENT (AMPS) 1000 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 20 40 60 80 100 120 140 160 TA, AMBIENT TEMPERATURE (C) Ipk/Io = 5.0 Ipk/Io = 10 Ipk/Io = 20 SQUARE WAVE Ipk/Io = p dc FREQ = 20 kHz C, CAPACITANCE (pF) 100 10 0 5.0 10 15 20 25 30 VR, REVERSE VOLTAGE (VOLTS) Figure 19. Typical Capacitance Figure 20. Current Derating PFO , AVERAGE POWER DISSIPATION (WATTS) 1.75 dc 1.50 1.25 1.00 0.75 Ipk/Io = 20 0.50 0.25 0 0 1.0 2.0 3.0 4.0 5.0 IO, AVERAGE FORWARD CURRENT (AMPS) Ipk/Io = 5.0 Ipk/Io = 10 Ipk/Io = p SQUARE WAVE Figure 21. Forward Power Dissipation Motorola TMOS Product Preview Data 7 MMDFS6N303 TYPICAL SCHOTTKY ELECTRICAL CHARACTERISTICS 1.0 D = 0.5 Rthja(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE 0.2 0.1 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE 0.001 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 t, TIME (s) 1.0E+00 1.0E+01 1.0E+02 1.0E+03 NORMALIZED TO RqJA AT STEADY STATE (1 PAD) 0.1010 W CHIP JUNCTION 39.422 mF 1.2674 W 27.987 W 30.936 W 36.930 W 0.2292 F 2.267 F AMBIENT 493.26 mF 0.0131 F Figure 22. Schottky Thermal Response 8 Motorola TMOS Product Preview Data MMDFS6N303 TYPICAL APPLICATIONS STEP DOWN SWITCHING REGULATORS LO + + Vin - CO Vout - LOAD Buck Regulator LO + + Vin - CO Vout - LOAD Synchronous Buck Regulator STEP UP SWITCHING REGULATORS L1 + + Vin Q1 - CO Vout - LOAD Boost Regulator + + Vin - CO Vout - LOAD Buck-Boost Regulator Motorola TMOS Product Preview Data 9 MMDFS6N303 TYPICAL APPLICATIONS MULTIPLE BATTERY CHARGERS Buck Regulator/Charger Q1 + Vin - D1 CO LO Q2 D2 BATT #1 Q3 D3 BATT #2 Li-lon BATTERY PACK APPLICATIONS Battery Pack PACK + Li-Ion BATTERY CELLS SMART IC DISCHARGE CHARGE Q1 Q2 PACK - SCHOTTKY SCHOTTKY * * * * Applicable in battery packs which require a high current level. During charge cycle Q2 is on and Q1 is off. Schottky can reduce power loss during fast charge. During discharge Q1 is on and Q2 is off. Again, Schottky can reduce power dissipation. Under normal operation, both transistors are on. 10 Motorola TMOS Product Preview Data MMDFS6N303 SO-8 FOOTPRINT 0.060 1.52 0.275 7.0 0.155 4.0 0.024 0.6 0.050 1.270 inches mm PACKAGE DIMENSIONS A 8 D 5 C E 1 4 H 0.25 M B M NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. DIMENSIONS ARE IN MILLIMETER. 3. DIMENSION D AND E DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE. 5. DIMENSION B DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 TOTAL IN EXCESS OF THE B DIMENSION AT MAXIMUM MATERIAL CONDITION. DIM A A1 B C D E e H h L MILLIMETERS MIN MAX 1.35 1.75 0.10 0.25 0.35 0.49 0.19 0.25 4.80 5.00 3.80 4.00 1.27 BSC 5.80 6.20 0.25 0.50 0.40 1.25 0_ 7_ h B C e A SEATING PLANE X 45 _ q L 0.10 A1 B 0.25 M q CB S A S STYLE 18: PIN 1. 2. 3. 4. 5. 6. 7. 8. ANODE ANODE SOURCE GATE DRAIN DRAIN CATHODE CATHODE CASE 751-06 SO- 08 ISSUE T Motorola TMOS Product Preview Data 11 MMDFS6N303 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Mfax is a trademark of Motorola, Inc. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 1-303-675-2140 or 1-800-441-2447 Customer Focus Center: 1-800-521-6274 MfaxTM: RMFAX0@email.sps.mot.com - TOUCHTONE 1-602-244-6609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, Motorola Fax Back System - US & Canada ONLY 1-800-774-1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 - http://sps.motorola.com/mfax/ HOME PAGE: http://motorola.com/sps/ JAPAN: Nippon Motorola Ltd.; SPD, Strategic Planning Office, 141, 4-32-1 Nishi-Gotanda, Shinagawa-ku, Tokyo, Japan. 81-3-5487-8488 12 Motorola TMOS ProductMMDFS6N303/D Preview Data |
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